Title :
Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications
Author :
Chiu, P.T. ; Law, D.C. ; Woo, R.L. ; Singer, S.B. ; Bhusari, D. ; Hong, W.D. ; Zakaria, A. ; Boisvert, J. ; Mesropian, S. ; King, R.R. ; Karam, N.H.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs- and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; semiconductor growth; semiconductor junctions; solar cells; vapour phase epitaxial growth; GaAs substrate; GaAs-InP; GaAs-based cell; InP substrate; InP-based cell; direct bonding; direct semiconductor bonded 5J cell; electron volt energy 0.73 eV; electron volt energy 1.05 eV; electron volt energy 1.4 eV; electron volt energy 1.7 eV; electron volt energy 2.2 eV; electron volt energy 4.75 eV to 4.78 eV; energy 5 J; low-resistance high-transmissive interface; metal organic vapor phase epitaxy; space application; space cell; terrestrial application; terrestrial cell tests; Bonding; Computer architecture; Gallium arsenide; Indium phosphide; Junctions; Resistance; Sun; Direct wafer bonding; multijunction cells;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2013.2279336
