Comparative analysis of RF wide bandgap technologies for UMTS applications

In this paper, we report the benefits of wide bandgap technology in UMTS applications. For this purpose, three, 10 W, 2.14 GHz class AB power amplifiers based on SiC MESFET and GaN HEMTs have been designed. A model based design procedure with simulated load pull characterization was used and the achieved results of the implemented amplifiers show an excellent performance from the efficiency/ linearity point of view. A small signal gain of 9, 13 and 15 dB for PA₁ (SiC MESFET, Cree), PA₂ (GaN HEMT, Eudyna) and PA₃ (GaN HEMT, Cree), respectively have been obtained. An output power of (40 - 41.5 dBm) and Max. PAE of (43 - 56%) have been achieved, too. Linearity performance based on gain compression, phase distortion, two-tone intercept points and finally ACLR characterization has been done. The results are compared and discussed in detail. It is found that, among state-of-the-art WBG transistor technologies, WBG offers the optimum solution for highly linear, high efficient power amplifiers in wireless communications to date.