A 4W GaN power amplifier for C-band application

Author

Markos, A.Z. ; Bathich, K. ; Gruner, D. ; Bengtsson, O. ; Boeck, G.

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2010

fDate

15-17 March 2010

Firstpage

118

Lastpage

121

Abstract

In this contribution, design of a 4W GaN HEMT power amplifier (PA) for C-band application for instance of Car to Car communications will be reported. The PA design procedure considers the characteristics of digital modulated signals planned to be used in C-Band. Such signals have a high peak to average ratio (PAR), which requires highly efficient and linear PA. A 4W low cost and small size class-AB PA has been designed and fabricated for the 5.6 to 5.9 GHz band using GaN on Si. The designed PA has maximum output power of 36 dBm with 8 dB of gain. An ACPR of -30.5 dBc has been measured using a 64 QAM signal of 9.6 dB PAR at an average output power of 27 dBm with power added efficiency (PAE) of about 18%.

Keywords

gallium compounds; high electron mobility transistors; microwave power amplifiers; mobile radio; quadrature amplitude modulation; wide band gap semiconductors; 64QAM signal; C-band application; GaN; HEMT power amplifier; PA design procedure; car-to-car communications; class-AB PA; digital modulated signals; efficiency 18 percent; frequency 5.6 GHz to 5.9 GHz; gain 8 dB; peak-to-average ratio; power 4 W; power added efficiency; Costs; Digital modulation; Gain; Gallium nitride; HEMTs; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498214