A 52–58 GHz signal generation IC for emerging mmWave applications in SiGe∶C BiCMOS technology

Author

Zhao, Yan ; Pfeiffer, Ullrich R.

Author_Institution

Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany

fYear

2010

fDate

15-17 March 2010

Firstpage

51

Lastpage

54

Abstract

This paper presents a mmWave signal generation circuit. The signal generator consists of a 52-58 GHz VCO, a divide-by-8 frequency prescaler and buffer circuits. The prescaler divides the oscillating frequency down to 6-7 GHz. The VCO´s phase noise is estimated as -71.2 and -89 dBc/Hz at 100-kHz and 1-MHz offset respectively. The generator is fabricated in a SiGe:C BiCMOS technology with a chip area of 415 μm × 550 μm. The VCO and prescaler consume 6 mA and 40 mA from a 2.2-V power supply respectively.

Keywords

BiCMOS integrated circuits; field effect MIMIC; signal generators; silicon compounds; voltage-controlled oscillators; SiGe:C; SiGe:C BiCMOS technology; VCO; buffer circuits; divide-by-8 frequency prescaler; frequency 52 GHz to 58 GHz; mmWave signal generation circuit; phase noise; signal generation IC; Application specific integrated circuits; BiCMOS integrated circuits; Capacitance; Capacitors; Frequency conversion; Phase noise; Signal generators; Transceivers; Tuning; Voltage-controlled oscillators; VCO; phase noise; prescaler; static divider;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498237