Impact of device scaling on phase noise in SiGe HBTs tunable active inductor oscillators (TAIOs)

This paper describes the impact of device scaling on phase noise in SiGe HBT tunable active inductor oscillator (TAIOs), which has recently emerged as a strong contender for RF and mixed signal applications. The relative contributions of the broadband (thermal and shot noise) and low frequency (1/f noise) noise sources were examined. The measured phase noise results reveal that device scaling increases the contribution from 1/f noise (near carrier), whereas, decreases the contribution from shot and thermal (far carrier).