Comparison of PSP and BSIM4 MOSFET model across various parameters

In this paper, the standard compact MOSFET models, the BSIM4 and the PSP, are compared up to 40 GHz. Based on the measurement results, the DC, small signal and large signal performance of these models are studied. Although both of these models show good agreements with the measurement, for cases where the gate-source voltage is slightly larger than the threshold voltage, the BSIM4 model shows accurate small signal performance. For the drain source voltage close to zero, the linearity of the PSP model is more reliable.