A passive mixer for 60 GHz applications in CMOS 65nm technology

Author

Ercoli, Mariano ; Kraemer, Michael ; Dragomirescu, Daniela ; Plana, Robert

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2010

fDate

15-17 March 2010

Firstpage

20

Lastpage

23

Abstract

A study of the feasibility of a wide band double balanced resistive mixer in the 60 GHz band is done. The device is implemented in a 65nm CMOS technology process. In this paper an approach to design an optimized version of the mixer in terms of the principal figures of merit: conversion loss, port to port isolation and noise figure is shown. The mixer will be a part of an homodyne down-conversion system. The conversion loss is 6.9 ± 0.2dB around 60GHz with a -5dBm of LO drive. The port-to-port isolation for the LO feed through is better than 41dB. The noise figure is 8.39dB. The power dissipation for the mixer depends on the LO buffer that increases the input LO power. Its power consumption is 15mW.

Keywords

CMOS integrated circuits; mixers (circuits); CMOS technology process; conversion loss; frequency 60 GHz; homodyne down-conversion system; noise figure; noise figure 8.39 dB; passive mixer; port to port isolation; power 15 mW; size 65 nm; wide band double balanced resistive mixer; CMOS technology; Circuits; Frequency; Linearity; Millimeter wave technology; Mixers; Noise figure; Power dissipation; Switches; Voltage; 60GHz Band; CMOS; Direct Conversion; Homodyne receivers; Low Power; Passive Mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498253