Title :
Validation of a theoretical model for NFmin estimation of SiGe HBTs
Author :
Sarmah, Neelanjan ; Schmalz, Klaus ; Scheytt, Christoph
Author_Institution :
IHP GmbH, Frankfurt (Oder), Germany
Abstract :
An evaluation based on a comparative study between two previously published models for minimum noise figure (NFmin) for heterojunction bipolar transistors (HBT) is presented. The complete set of noise parameters is extracted from the Y parameters of the transistor. The results from the published models have been compared with simulation and measurement results in IHP´s SiGe C: BiCMOS technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; integrated circuit noise; semiconductor device noise; BiCMOS technology; HBT; SiGe; heterojunction bipolar transistor; minimum noise figure estimation; noise parameter; BiCMOS integrated circuits; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Noise measurement; Optimized production technology; Signal to noise ratio; Silicon compounds; Silicon germanium; HBT; NFmin; SiGe C:BiCMOS; component;
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
