• DocumentCode
    519836
  • Title

    A 2 W GaAs Doherty power amplifier for WiMAX applications

  • Author

    Bathich, Khaled ; Markos, Asdesach Z. ; Bengtsson, Olof ; Boeck, Georg

  • Author_Institution
    Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
  • fYear
    2010
  • fDate
    15-17 March 2010
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    This paper presents a GaAs Doherty power amplifier (DPA), designed and implemented at 5.6 GHz, for WiMAX applications. The designed DPA uses two identical 1 W packaged GaAs HEMTs for the main and peaking amplifiers. A maximum output power of 34.4 dBm (2.8 W) was measured, with a maximum power-added efficiency of PAE = 31% (η = 42%). The efficiency was maintained higher than PAE = 23% (η = 29%), over 6 dB of output back-off range, and higher than PAE = 16% (η = 21%) over 10 dB output back-off. The linearity performance of the designed Doherty PA was experimentally tested with a 9-carrier, 64-QAM digitally modulated signal with a peak-to-average-power ratio of PAR = 9.6 dB. An adjacent-channel-leakage ratio of ACLR = -33 dBc was measured at an average output power of Pout, avg. = 24 dBm. To the best knowledge of the authors, this is the first Doherty PA designed and implemented in the 5 - 6 GHz frequency range, in hybrid technology.
  • Keywords
    WiMax; gallium arsenide; high electron mobility transistors; power amplifiers; quadrature amplitude modulation; 64-QAM digitally modulated signal; Doherty power amplifier; GaAs; HEMT; WiMAX; adjacent-channel-leakage ratio; frequency 5 GHz to 6 GHz; peak-to-average-power ratio; power 2 W; Gallium arsenide; HEMTs; Linearity; MODFETs; Packaging; Power amplifiers; Power generation; Power measurement; Signal design; WiMAX;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2010 German
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4244-4933-0
  • Electronic_ISBN
    978-3-9812668-1-8
  • Type

    conf

  • Filename
    5498312