DocumentCode :
519836
Title :
A 2 W GaAs Doherty power amplifier for WiMAX applications
Author :
Bathich, Khaled ; Markos, Asdesach Z. ; Bengtsson, Olof ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
fYear :
2010
fDate :
15-17 March 2010
Firstpage :
170
Lastpage :
173
Abstract :
This paper presents a GaAs Doherty power amplifier (DPA), designed and implemented at 5.6 GHz, for WiMAX applications. The designed DPA uses two identical 1 W packaged GaAs HEMTs for the main and peaking amplifiers. A maximum output power of 34.4 dBm (2.8 W) was measured, with a maximum power-added efficiency of PAE = 31% (η = 42%). The efficiency was maintained higher than PAE = 23% (η = 29%), over 6 dB of output back-off range, and higher than PAE = 16% (η = 21%) over 10 dB output back-off. The linearity performance of the designed Doherty PA was experimentally tested with a 9-carrier, 64-QAM digitally modulated signal with a peak-to-average-power ratio of PAR = 9.6 dB. An adjacent-channel-leakage ratio of ACLR = -33 dBc was measured at an average output power of Pout, avg. = 24 dBm. To the best knowledge of the authors, this is the first Doherty PA designed and implemented in the 5 - 6 GHz frequency range, in hybrid technology.
Keywords :
WiMax; gallium arsenide; high electron mobility transistors; power amplifiers; quadrature amplitude modulation; 64-QAM digitally modulated signal; Doherty power amplifier; GaAs; HEMT; WiMAX; adjacent-channel-leakage ratio; frequency 5 GHz to 6 GHz; peak-to-average-power ratio; power 2 W; Gallium arsenide; HEMTs; Linearity; MODFETs; Packaging; Power amplifiers; Power generation; Power measurement; Signal design; WiMAX;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
Type :
conf
Filename :
5498312
Link To Document :
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