A SiGe H-bridge switching amplifier for class-S amplifiers with clock frequencies up to 6 GHz

Author

Heck, S. ; Bräckle, A. ; Schmidt, M. ; Schuller, F. ; Grözing, M. ; Berroth, M. ; Gustat, H. ; Scheytt, J.-C.

Author_Institution

Inst. of Electr. & Opt. Commun. Eng., Univ. Stuttgart, Stuttgart, Germany

fYear

2010

fDate

15-17 March 2010

Firstpage

174

Lastpage

177

Abstract

This paper describes the design of the first voltage-mode switching amplifier in a fast complementary SiGe-technology in the GHz-range. The amplifier is intended as a driver stage for a high power GaN amplifier in a class-S system. It can be operated with pseudo-random digital pulse trains up to 6 Gbit/s. The efficiency of the switching stage is about 57% for a rectangular drive signal with a 50% duty cycle and a frequency of 3 GHz. The amplifier including the drivers shows a PAE of 33%. The broadband output power of the pulse train is about 105 mW.

Keywords

Ge-Si alloys; amplifiers; gallium compounds; wide band gap semiconductors; GaN; H-bridge switching amplifier; broadband output power; class S amplifier system; clock frequency; duty cycle; frequency 3 GHz; pseudorandom digital pulse; pulse train; rectangular drive signal; voltage mode switching amplifier; Broadband amplifiers; Clocks; Driver circuits; Frequency; Gallium nitride; Germanium silicon alloys; High power amplifiers; Pulse amplifiers; Silicon germanium; Voltage; class-S amplifier; switching amplifier; voltage mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498313