Title :
A SiGe H-bridge switching amplifier for class-S amplifiers with clock frequencies up to 6 GHz
Author :
Heck, S. ; Bräckle, A. ; Schmidt, M. ; Schuller, F. ; Grözing, M. ; Berroth, M. ; Gustat, H. ; Scheytt, J.-C.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Univ. Stuttgart, Stuttgart, Germany
Abstract :
This paper describes the design of the first voltage-mode switching amplifier in a fast complementary SiGe-technology in the GHz-range. The amplifier is intended as a driver stage for a high power GaN amplifier in a class-S system. It can be operated with pseudo-random digital pulse trains up to 6 Gbit/s. The efficiency of the switching stage is about 57% for a rectangular drive signal with a 50% duty cycle and a frequency of 3 GHz. The amplifier including the drivers shows a PAE of 33%. The broadband output power of the pulse train is about 105 mW.
Keywords :
Ge-Si alloys; amplifiers; gallium compounds; wide band gap semiconductors; GaN; H-bridge switching amplifier; broadband output power; class S amplifier system; clock frequency; duty cycle; frequency 3 GHz; pseudorandom digital pulse; pulse train; rectangular drive signal; voltage mode switching amplifier; Broadband amplifiers; Clocks; Driver circuits; Frequency; Gallium nitride; Germanium silicon alloys; High power amplifiers; Pulse amplifiers; Silicon germanium; Voltage; class-S amplifier; switching amplifier; voltage mode;
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
