6 GHz medium voltage LDMOS power amplifier based on load/source pull characterization

Author

Gruner, Daniel ; Sorge, Roland ; Markos, Asdesach Zena ; Bengtsson, Olof ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2010

fDate

15-17 March 2010

Firstpage

178

Lastpage

181

Abstract

This work presents the design and characterization of medium voltage LDMOS transistors developed for 5-6 GHz power amplifier applications. Power transistors of different size have been fabricated in a 0.25 μm BiCMOS technology of IHP microelectronics and were characterized using a load/source pull measurement system. The optimum load and source impedances obtained for a 1.1 mm device provide the basis for a 6 GHz power amplifier design with an output power of 27.8 dBm in saturation and 25.1 dBm at 1 dB power compression. The peak drain efficiency of this power amplifier is 25.5% with a small signal gain of 8.1 dB.

Keywords

BiCMOS analogue integrated circuits; microwave power amplifiers; power MOSFET; BiCMOS technology; IHP microelectronics; LDMOS power amplifier; frequency 5 GHz to 6 GHz; frequency 6 GHz; gain 8.1 dB; load-source pull characterization; medium voltage LDMOS transistor; peak drain efficiency; size 0.25 micron; BiCMOS integrated circuits; Gain; Impedance; Medium voltage; Microelectronics; Power amplifiers; Power generation; Power measurement; Power transistors; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Conference_Location

Berlin

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498314