• DocumentCode
    519905
  • Title

    Notice of Violation of IEEE Publication Principles
    Piezoresistive cantilever for mechanical force sensors

  • Author

    Bychkovsky, Volodymyr ; Lobur, Mykhaylo

  • Author_Institution
    CAM Dept., Lviv Polytech. Nat. Univ., Lviv, Ukraine
  • fYear
    2010
  • fDate
    20-23 April 2010
  • Firstpage
    87
  • Lastpage
    88
  • Abstract
    Notice of Violation of IEEE Publication Principles

    "Piezoresistive Cantilever for Mechanical Force Sensors"
    by Volodymyr Bychkovsky, Mykhaylo Lobur,
    in the Proceedings of the 2010 VI-th International Conference on Perspective Technologies and Methods in MEMS Design (MEMSTECH), April 2010, pp. 143-146

    After careful and considered review of the content and authorship of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE\´s Publication Principles.

    This paper contains substantial duplication of original text from the paper cited below. The original text was copied without attribution (including appropriate references to the original author(s) and/or paper title) and without permission.

    Due to the nature of this violation, reasonable effort should be made to remove all past references to this paper, and future references should be made to the following article:

    "Piezoresistive Cantilever for Mechanical Force Sensors"

    by T. Chu Duc, J.F. Creemer, P.J.F. Swart, P.M. Sarra
    in the Proceedings of the 2005 Semiconductor Advances for Future Electronics (SAFE) 2005

    This paper describes piezoresistive cantilever force sensors that are used to evaluate the impact force between microhandling tools and microparticles in the nano-Newton range. The 500 nm-thick piezoresistive sensors are made from epitaxial silicon on single crystal silicon. This cantilever is based on conventional silicon wafers and fabricated using bulk micromachining. The cantilevers are 300-500 μm long, 10-20 μm high, and 10-18 μm wide. The applied force on this sensor is parallel to wafer surface. This structure can eliminate the effect of the vertical force, increasing the sensitivity and accuracy of the system. The force sensitivity of implemented sensors ranges from 150 to 300 V/N. The force resolution estimated at 6 nN.
  • Keywords
    cantilevers; force sensors; micromachining; microsensors; nanofabrication; piezoresistive devices; silicon; bulk micromachining; mechanical force sensors; microhandling tools; piezoresistive cantilever; piezoresistive sensors; silicon wafers; size 500 nm; Atomic force microscopy; Conductivity; Epitaxial layers; Etching; Fabrication; Force sensors; Mechanical sensors; Micromachining; Piezoresistance; Silicon on insulator technology; force sensor; nano-Newton force sensor; piezoresistive cantilever; piezoresistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Perspective Technologies and Methods in MEMS Design (MEMSTECH), 2010 Proceedings of VIth International Conference on
  • Conference_Location
    Lviv
  • Print_ISBN
    978-1-4244-7325-0
  • Electronic_ISBN
    978-966-2191-11-0
  • Type

    conf

  • Filename
    5499322