DocumentCode :
519947
Title :
Excitation wavelength dependence of time-resolved photoluminescence in deep-UV MQW LEDs on bulk AlN
Author :
Garrett, Gregory A. ; Shen, Hongen ; Wraback, Michael ; Grandusky, James R. ; Gibb, Shawn ; Schowalter, Leo J.
Author_Institution :
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Photoluminescence lifetimes of nearly dislocation free high Al content AlGaN MQW LEDs on bulk AlN are presented as a function of temperature and excitation power for both direct photo-excitation of the wells and barriers.
Keywords :
aluminium compounds; excited states; light emitting diodes; photoexcitation; photoluminescence; quantum wells; AlN; deep-UV MQW LED; excitation wavelength dependence; photoexcitation; time-resolved photoluminescence; Aluminum gallium nitride; Electron devices; Laboratories; Light emitting diodes; Optical materials; Optical pumping; Photoluminescence; Powders; Quantum well devices; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5499505
Link To Document :
بازگشت