DocumentCode
519947
Title
Excitation wavelength dependence of time-resolved photoluminescence in deep-UV MQW LEDs on bulk AlN
Author
Garrett, Gregory A. ; Shen, Hongen ; Wraback, Michael ; Grandusky, James R. ; Gibb, Shawn ; Schowalter, Leo J.
Author_Institution
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Photoluminescence lifetimes of nearly dislocation free high Al content AlGaN MQW LEDs on bulk AlN are presented as a function of temperature and excitation power for both direct photo-excitation of the wells and barriers.
Keywords
aluminium compounds; excited states; light emitting diodes; photoexcitation; photoluminescence; quantum wells; AlN; deep-UV MQW LED; excitation wavelength dependence; photoexcitation; time-resolved photoluminescence; Aluminum gallium nitride; Electron devices; Laboratories; Light emitting diodes; Optical materials; Optical pumping; Photoluminescence; Powders; Quantum well devices; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499505
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