Title :
GaAs deep-center stimulated-emission at 1.5µm
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
Room-temperature stimulated-emission, optical gains larger than known significant losses, and single-pass laser action from GaAs deep-centers are demonstrated at low electrical injection in cw mode at 1.3-1.5 μm. Fast hole capture maintains the population inversion.
Keywords :
III-V semiconductors; gallium arsenide; hole traps; optical elements; optical materials; semiconductor lasers; stimulated emission; GaAs; deep-center stimulated-emission; hole capture; optical gains; single-pass laser action; wavelength 1.3 mum to 1.5 mum; Clamps; Current density; Gallium arsenide; High speed optical techniques; Laser modes; Optical losses; Optical materials; Resonance; Semiconductor materials; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
