Title :
Deep ultraviolet LEDs based on AlGaN alloys by plasma-assisted molecular beam epitaxy
Author :
Liao, Yitao ; Thomidis, Christos ; Kao, Chen-Kai ; Bellotti, Enrico ; Moustakas, Theodore D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Abstract :
We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%.
Keywords :
III-V semiconductors; light emitting diodes; molecular beam epitaxial growth; AlGaN alloys; deep ultraviolet LED; plasma-assisted molecular beam epitaxy; Aluminum gallium nitride; Biomedical optical imaging; Capacitive sensors; Gold; Light emitting diodes; Molecular beam epitaxial growth; Optical surface waves; Plasma sources; Stimulated emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
