Title :
Spatially resolved, polarized photoluminescence from wurtzite InGaAs/GaAs nanoneedles
Author :
Chen, Roger ; Chuang, Linus C. ; Tran, Thai ; Moewe, Michael ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
We spatially resolve photoluminescence from wurtzite InGaAs/GaAs core-shell nanoneedles and characterize their nonuniform quantum well emission. Polarization measurements reveal anisotropy behavior that is reminiscent of GaN and other wurtzite materials.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanostructured materials; optical properties; photoluminescence; quantum wells; semiconductor growth; InGaAs-GaAs; nonuniform quantum well emission; polarization measurements; polarized photoluminescence; spatially resolved photoluminescence; wurtzite nanoneedles; Anisotropic magnetoresistance; Gallium arsenide; Gallium nitride; Geometrical optics; III-V semiconductor materials; Indium gallium arsenide; Optical polarization; Photoluminescence; Spatial resolution; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
