Monolithic 40 GHz passively mode locked AlGaInAs/InP 1.55 µm MQW laser with surface-etched Bragg gratings

Author

Hou, L. ; Haji, M. ; Dylewicz, R. ; Stolarz, P. ; Kelly, A.E. ; Arnold, J.M. ; Marsh, J.H. ; De La Rue, R.M. ; Sorel, M. ; Bryce, A.C. ; Qiu, B.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2010

fDate

16-21 May 2010

Firstpage

1

Lastpage

2

Abstract

We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low loss and accurate wavelength control. The lasers produce 10-ps Gaussian-pulses with TBP of 0.75.

Keywords

Bragg gratings; III-V semiconductors; aluminium compounds; distributed Bragg reflectors; indium compounds; laser mode locking; quantum well lasers; AlGaInAs-InP; frequency 40 GHz; monolithic passively mode locked MQW laser; surface-etched Bragg gratings; surface-etched distributed Bragg mirrors; wavelength 1.55 mum; Bragg gratings; Distributed Bragg reflectors; Indium phosphide; Laser mode locking; Laser tuning; Masers; Optical surface waves; Quantum well devices; Semiconductor lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-890-2

Electronic_ISBN

978-1-55752-890-2

Type

conf

Filename

5499639