Title :
Monolithic 40 GHz passively mode locked AlGaInAs/InP 1.55 µm MQW laser with surface-etched Bragg gratings
Author :
Hou, L. ; Haji, M. ; Dylewicz, R. ; Stolarz, P. ; Kelly, A.E. ; Arnold, J.M. ; Marsh, J.H. ; De La Rue, R.M. ; Sorel, M. ; Bryce, A.C. ; Qiu, B.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low loss and accurate wavelength control. The lasers produce 10-ps Gaussian-pulses with TBP of 0.75.
Keywords :
Bragg gratings; III-V semiconductors; aluminium compounds; distributed Bragg reflectors; indium compounds; laser mode locking; quantum well lasers; AlGaInAs-InP; frequency 40 GHz; monolithic passively mode locked MQW laser; surface-etched Bragg gratings; surface-etched distributed Bragg mirrors; wavelength 1.55 mum; Bragg gratings; Distributed Bragg reflectors; Indium phosphide; Laser mode locking; Laser tuning; Masers; Optical surface waves; Quantum well devices; Semiconductor lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
