Title :
Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells
Author :
Sun, Guan ; Tripathy, Suvranta K. ; Ding, Yujie J. ; Liu, Guangyu ; Zhao, Hongping ; Huang, G.S. ; Tansu, Nelson ; Khurgin, Jacob B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; photoluminescence; quantum wells; radiation quenching; wide band gap semiconductors; GaN-AlN; asymmetric-coupled quantum wells; photoluminescence quenching; relocation of electrons; Charge carrier processes; Electron optics; Energy measurement; Gallium nitride; High speed optical techniques; Laser excitation; Nanostructures; Photoluminescence; Quantum computing; Temperature;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
