Title :
Ultrafast optical response and transient population inversion of photoexcited Ge/SiGe quantum wells
Author :
Chatterjee, S. ; Lange, C. ; Köster, N.S. ; Schäfer, M. ; Kira, M. ; Koch, S.W. ; Chrastina, D. ; Isella, G. ; Von Känel, H. ; Sigg, H.
Author_Institution :
Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg, Germany
Abstract :
The ultrafast carrier dynamics of Ge/SiGe quantum wells on Si substrate are investigated by pump-probe spectroscopy. Pronounced nonequilibrium effects in the relaxation dynamics and transient gain are observed and analyzed using a microscopic many-body theory.
Keywords :
Ge-Si alloys; elemental semiconductors; high-speed optical techniques; photoexcitation; quantum wells; GeSi; microscopic many-body theory; photoexcited quantum wells; pump-probe spectroscopy; relaxation dynamics; transient gain; transient population inversion; ultrafast optical response; Absorption; Bleaching; Electron optics; Germanium silicon alloys; Optical modulation; Optical pumping; Optical scattering; Resonance; Silicon germanium; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
