DocumentCode :
520138
Title :
Temperature-dependent coupling of GaAs quantum well and interfacial quantum dots studied with optical 2D fourier-transform spectroscopy
Author :
Moody, G. ; Siemens, M.E. ; Bristow, A.D. ; Dai, X. ; Bracker, A.S. ; Gammon, D. ; Cundiff, S.T.
Author_Institution :
Nat. Inst. of Stand. & Technol., Univ. of Colorado, Boulder, CO, USA
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Optical 2D Fourier-transform spectra reveal time and temperature dependent relaxation from GaAs quantum well states into the interfacial quantum dot ensemble. We attribute the increased rate of relaxation at higher temperature to stimulated phonon emission.
Keywords :
Fourier transform spectra; III-V semiconductors; gallium arsenide; semiconductor quantum dots; semiconductor quantum wells; stimulated emission; GaAs; interfacial quantum; optical 2D Fourier-transform spectroscopy; quantum well states; stimulated phonon emission; temperature dependent relaxation; temperature-dependent coupling; Excitons; Gallium arsenide; Lattices; Nonlinear optics; Optical coupling; Optical mixing; Phonons; Quantum dots; Spectroscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5499701
Link To Document :
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