Title :
Internal quantum efficiency measurement in InGaN/GaN UV LEDs with patterned sapphire substrate by photoluminescence and electroluminescence method
Author :
Wang, C.H. ; Chiu, C.H. ; Ke, C.C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; photoluminescence; sapphire; wide band gap semiconductors; InGaN-GaN; electroluminescence method; internal quantum efficiency measurement; patterned sapphire substrate; photoluminescence method; ultraviolet light emitting diodes; Biological materials; Biomedical optical imaging; Charge carrier density; Electroluminescence; Gallium nitride; Light emitting diodes; Optical sensors; Photoluminescence; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
