DocumentCode
520340
Title
III-Nitride UV emitters and their applications
Author
Khan, Asif
Author_Institution
Univ. of South Carolina, Columbia, SC, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
III-Nitride UV light emitting diodes (LEDs) have an enormous applications potential for air & water purification, food disinfection, polymer curing and bio-medical instrumentation. However the growth and processing of these devices is very challenging due to the high Al-fraction AlGaN layers needed for deep UV emission. Since early 2000, our research group has developed III-N deep UV LEDs (emission wavelength < 300 nm) over sapphire substrates. The key to our success was the use of a new pulsed epitaxy procedure and new device designs to mitigate junction heating issues. In this paper we will review the progress to date which has led to large area deep UV LED lamps with cw-powers approaching 100 mW.
Keywords
Aluminum gallium nitride; Curing; Epitaxial growth; Heating; Instruments; LED lamps; Light emitting diodes; Organic light emitting diodes; Purification; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499911
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