• DocumentCode
    520340
  • Title

    III-Nitride UV emitters and their applications

  • Author

    Khan, Asif

  • Author_Institution
    Univ. of South Carolina, Columbia, SC, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    III-Nitride UV light emitting diodes (LEDs) have an enormous applications potential for air & water purification, food disinfection, polymer curing and bio-medical instrumentation. However the growth and processing of these devices is very challenging due to the high Al-fraction AlGaN layers needed for deep UV emission. Since early 2000, our research group has developed III-N deep UV LEDs (emission wavelength < 300 nm) over sapphire substrates. The key to our success was the use of a new pulsed epitaxy procedure and new device designs to mitigate junction heating issues. In this paper we will review the progress to date which has led to large area deep UV LED lamps with cw-powers approaching 100 mW.
  • Keywords
    Aluminum gallium nitride; Curing; Epitaxial growth; Heating; Instruments; LED lamps; Light emitting diodes; Organic light emitting diodes; Purification; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499911