Title :
Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity
Author :
Kuramochi, Eiichi ; Tanabe, Takasumi ; Taniyama, Hideaki ; Kawasaki, Kohei ; Notomi, Masaya
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
Keywords :
Finite difference methods; Integrated optics; Microscopy; Nanophotonics; Optical devices; Optical resonators; Photonic crystals; Resonance; Silicon on insulator technology; Time domain analysis;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
