DocumentCode
520402
Title
Single crystalline GaAs nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence
Author
Chuang, Linus C. ; Ng, Kar Wei ; Tran, Thai-Truong D. ; Ko, Wai Son ; Moewe, Michael ; Crankshaw, Shanna ; Chen, Roger ; Chang-Hasnain, Connie
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Catalyst-free GaAs nanoneedles are grown on a c-plane sapphire substrate at 400°C using MOCVD. Despite of an extremely large lattice mismatch of 46%, the nanoneedles show single wurtzite-phase and bright room-temperature photoluminescence with narrow linewidths.
Keywords
Crystallization; Gallium arsenide; III-V semiconductor materials; Lattices; Luminescence; MOCVD; Neural networks; Substrates; Thermal conductivity; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499975
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