• DocumentCode
    520418
  • Title

    Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns

  • Author

    Liu, Guangyu ; Zhao, Hongping ; Park, Joo Hyung ; Mawst, Luke J. ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010 cm-2, which represents the highest QDs density reported for nitride-based QDs.
  • Keywords
    III-V semiconductors; indium compounds; nanophotonics; optical fabrication; polymer blends; quantum dots; wide band gap semiconductors; InGaN; growths of ultra high density quantum dots; selective area growths; self-assembled diblock copolymer nanopatterns; Capacitive sensors; Gallium nitride; Light emitting diodes; Nanopatterning; Quantum dot lasers; Quantum dots; Radiative recombination; Scanning electron microscopy; Self-assembly; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520418