DocumentCode
520428
Title
Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate
Author
Ee, Yik-Khoon ; Li, Xiao-Hang ; Biser, J.M. ; Cao, W. ; Chan, Helen M. ; Vinci, R.P. ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; sapphire; Ill-nitride light-emitting diodes; abbreviated growth mode; dislocation density; growth evolution study; nano-patterned sapphire; non-radiative recombination; patterned AGOG substrate; time-resolved photoluminescence study; Charge carrier lifetime; Epitaxial growth; Epitaxial layers; Etching; Gallium nitride; Light emitting diodes; Optical buffering; Photoluminescence; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500005
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