Title :
Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate
Author :
Ee, Yik-Khoon ; Li, Xiao-Hang ; Biser, J.M. ; Cao, W. ; Chan, Helen M. ; Vinci, R.P. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; sapphire; Ill-nitride light-emitting diodes; abbreviated growth mode; dislocation density; growth evolution study; nano-patterned sapphire; non-radiative recombination; patterned AGOG substrate; time-resolved photoluminescence study; Charge carrier lifetime; Epitaxial growth; Epitaxial layers; Etching; Gallium nitride; Light emitting diodes; Optical buffering; Photoluminescence; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
