• DocumentCode
    520430
  • Title

    Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates

  • Author

    Grandusky, James R. ; Cui, Yongjie ; Mendrick, Mark C. ; Gibb, Shawn ; Schowalter, Leo J.

  • Author_Institution
    Crystal IS, Green Island, NY, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The development of pseudomorphic layers on low dislocation density AlN substrates is leading to improvements in reliability and performance of devices operating in the UVC range.
  • Keywords
    aluminium compounds; light emitting diodes; AlN; bulk substrates; pseudomorphic layers development; pseudomorphic ultraviolet light emitting diodes; Aluminum nitride; Chemicals; DNA; Electromagnetic wave absorption; Heat sinks; Light emitting diodes; Light sources; Optical devices; Quantum well devices; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500008