• DocumentCode
    520470
  • Title

    High-Q SiO2-clad silicon photonic crystal microcavities for ultra-low energy switching

  • Author

    Anderson, Sean P. ; Fauchet, Philippe M.

  • Author_Institution
    Inst. of Opt., Univ. of Rochester, Rochester, NY, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We outline the development of a SiO2-embedded silicon photonic crystal microcavity with Q above 10,000, which forms the basis for a CMOS-compatible electro-optic modulator with switching energy below 0.1 fJ/bit.
  • Keywords
    claddings; electro-optical modulation; integrated optics; micro-optics; optical switches; optical waveguides; photonic crystals; silicon; silicon compounds; CMOS compatible electrooptic modulator; Si; SiO2; high q clad silicon photonic crystal microcavities; ultralow energy switching; Geometry; Integrated optics; Microcavities; Optical interconnections; Optical modulation; Photonic band gap; Photonic crystals; Q factor; Silicon; Slabs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520470