Title :
High-Q SiO2-clad silicon photonic crystal microcavities for ultra-low energy switching
Author :
Anderson, Sean P. ; Fauchet, Philippe M.
Author_Institution :
Inst. of Opt., Univ. of Rochester, Rochester, NY, USA
Abstract :
We outline the development of a SiO2-embedded silicon photonic crystal microcavity with Q above 10,000, which forms the basis for a CMOS-compatible electro-optic modulator with switching energy below 0.1 fJ/bit.
Keywords :
claddings; electro-optical modulation; integrated optics; micro-optics; optical switches; optical waveguides; photonic crystals; silicon; silicon compounds; CMOS compatible electrooptic modulator; Si; SiO2; high q clad silicon photonic crystal microcavities; ultralow energy switching; Geometry; Integrated optics; Microcavities; Optical interconnections; Optical modulation; Photonic band gap; Photonic crystals; Q factor; Silicon; Slabs;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
