DocumentCode :
520547
Title :
InGaAs QW nanopillar light emitting diodes monolithically grown on a Si substrate
Author :
Chuang, Linus C. ; Chen, Roger ; Sedgwick, Forrest ; Ko, Wai Son ; Ng, Kar Wei ; Tran, Thai-Truong D. ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Room-temperature operation of InGaAs/GaAs QW nanopillar light emitting diodes grown on a (111) Si substrate by low temperature MOCVD (400°C) and fabricated using conventional lithography and processing techniques are reported for the first time.
Keywords :
Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Laser excitation; Light emitting diodes; Lithography; MOCVD; Neural networks; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5500130
Link To Document :
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