DocumentCode :
520682
Title :
Thin film silicon solar cell fabricated at 100°C by high density plasma for flexible photovoltaic application
Author :
Shen, Chang-Hong ; Shieh, Jia-Min ; Kuo, Hao-Chung ; Huang, Jung Y. ; Yu, Wen-Chien ; Huang, Wen-Hsien ; Wang, Chao-Kei ; Hsu, Chih-Wei ; Lin, Yu-Hsin ; Chiu, Hung-Yu ; Dai, Bau-Tong ; Yang, Fu-Liang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Record fabrication temperature, 100°C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200°C (4.1% at 135°C).
Keywords :
Amorphous materials; Fabrication; Photovoltaic cells; Photovoltaic systems; Plasma applications; Plasma density; Plasma temperature; Semiconductor thin films; Silicon; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5500274
Link To Document :
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