• DocumentCode
    520949
  • Title

    Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth

  • Author

    Ling, Shih-Chun ; Chang, Shih-Pang ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have demonstrated nanorod lateral overgrowth to reduce dislocation density in a-plane GaN. Subsequently, we grow green a-plane light-emitting diodes using nanorod lateral overgrowth. Output power of 0.5 mW was measured at 20 mA.
  • Keywords
    Charge carrier processes; Electroluminescence; Gallium nitride; Gold; Light emitting diodes; Photonics; Power generation; Power measurement; Radiative recombination; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520949