Title :
Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode
Author :
Shen, Kun-Ching ; Chen, Cheng-Yen ; Lu, Yen-Cheng ; Liao, Che-Hao ; Chen, Chih-Yen ; Hsieh, Chieh ; Yang, C.C.
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; silicon compounds; surface plasmons; wide band gap semiconductors; InGaN-GaN; emission efficiency; enhanced surface plasmon coupling effect; light emitting diode; nanogratings; quantum well; Fabrication; Gallium nitride; Gratings; Light emitting diodes; Nanoscale devices; Nanostructures; Optical coupling; Optical polarization; Photonics; Plasmons;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
