• DocumentCode
    520975
  • Title

    Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode

  • Author

    Shen, Kun-Ching ; Chen, Cheng-Yen ; Lu, Yen-Cheng ; Liao, Che-Hao ; Chen, Chih-Yen ; Hsieh, Chieh ; Yang, C.C.

  • Author_Institution
    Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; silicon compounds; surface plasmons; wide band gap semiconductors; InGaN-GaN; emission efficiency; enhanced surface plasmon coupling effect; light emitting diode; nanogratings; quantum well; Fabrication; Gallium nitride; Gratings; Light emitting diodes; Nanoscale devices; Nanostructures; Optical coupling; Optical polarization; Photonics; Plasmons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520975