Title :
High-brightness from unstable resonator mid-IR semiconductor lasers
Author :
Ongstad, A.P. ; Dente, G.C. ; Tilton, M.L. ; Chavez, J.C. ; Kaspi, R. ; Gianardi, D.M.
Author_Institution :
Air Force Res. Lab., Directed Energy Directorate AFRL/DELS, Kirtland AFB, NM, USA
Abstract :
We describe high-brightness, broad area midinfrared semiconductor lasers. The laser structures incorporated 14 type-II quantum wells imbedded in thick waveguide/absorber regions composed of InGaAsSb. The optically pumped devices achieved higher brightness operation as unstable facets. For a 4 mm UR operating at λ=4.7µm and at 35 x threshold the device was observed to be diffraction limited. In comparison a standard Fabry-Perot laser was many times diffraction limited.
Keywords :
Optical devices; Optical diffraction; Optical pumping; Optical resonators; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
