Title :
3.2 µm single spatial mode diode lasers operating at room temperature
Author :
Soibel, A. ; Frez, C. ; Ksendzov, A. ; Qiu, Y. ; Forouhar, S. ; Chen, J. ; Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Tsvid, G. ; Belenky, G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40°C with 1 mW of power at wavelengths above 3.2 μm.
Keywords :
gallium compounds; indium compounds; optical waveguides; ridge waveguides; semiconductor lasers; semiconductor quantum wells; GaSb; InGaAsSb-AlInGaAsSb; quantum well; ridge waveguide; single spatial mode diode lasers; temperature 293 K to 298 K; wavelength 3.2 mum; Chemical lasers; Diode lasers; Gas lasers; Optical waveguides; Plasma temperature; Power generation; Quantum well lasers; Semiconductor lasers; Temperature distribution; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
