DocumentCode
521171
Title
High performance visible semiconductor lasers operating at 630 nm
Author
Qiu, B.C. ; Kowalski, O.P. ; McDougall, S.D. ; Schmidt, B. ; Marsh, J.H.
Author_Institution
Intense Ltd., Glasgow, UK
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
630 nm single mode lasers with a V-profile layer incorporated within the waveguide core exhibit reduced fast axis divergence (19° FWHM) while maintaining a low threshold current (30 mA), making them ideal for display applications.
Keywords
Displays; Laser modes; Optical design; Optical sensors; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor lasers; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500782
Link To Document