DocumentCode
521320
Title
Modeling of a 10GHz SiGe HBT EO modulator
Author
Deng, Shengling ; Neogi, Tuhin Guha ; Novak, Joseph ; Mcdonald, John ; Huang, Z. Rena
Author_Institution
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
The modeling of an EO modulator based on SiGe Heterojunction Bipolar Transistor is presented. The device exhibits 10GHz switching speed with a π-phase shift length of 74µm. The total propagation loss is less than 4dB.
Keywords
Doping profiles; Electrooptic modulators; Electrooptical waveguides; Germanium silicon alloys; Heterojunction bipolar transistors; Optical devices; Optical waveguides; Semiconductor process modeling; Silicon carbide; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500936
Link To Document