Title :
Modeling of a 10GHz SiGe HBT EO modulator
Author :
Deng, Shengling ; Neogi, Tuhin Guha ; Novak, Joseph ; Mcdonald, John ; Huang, Z. Rena
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The modeling of an EO modulator based on SiGe Heterojunction Bipolar Transistor is presented. The device exhibits 10GHz switching speed with a π-phase shift length of 74µm. The total propagation loss is less than 4dB.
Keywords :
Doping profiles; Electrooptic modulators; Electrooptical waveguides; Germanium silicon alloys; Heterojunction bipolar transistors; Optical devices; Optical waveguides; Semiconductor process modeling; Silicon carbide; Silicon germanium;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
