• DocumentCode
    521473
  • Title

    Photoluminescence emission in deep ultraviolet region from GaN/ALN asymmetric-coupled quantum wells

  • Author

    Sun, Guan ; Tripathy, Suvranta K. ; Ding, Yujie J. ; Liu, Guangyu ; Huang, G.S. ; Zhao, Hongping ; Tansu, Nelson ; Khurgin, Jacob B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; GaN-AlN; asymmetric-coupled quantum wells; deep ultraviolet photoluminescence; electron volt energy 5.1 eV; electrons recombination; photoluminescence emission; Charge carrier processes; Gallium nitride; Laser excitation; Photoluminescence; Quantum computing; Quantum well lasers; Radiative recombination; Space vector pulse width modulation; Spontaneous emission; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5501095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=521473