DocumentCode
521491
Title
Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes
Author
Zhao, Hongping ; Liu, Guangyu ; Li, Xiao-Hang ; Ee, Yik-Khoon ; Hua Tong ; Zhang, Jing ; Huang, G.S. ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.
Keywords
Current density; Gallium nitride; Light emitting diodes; Optical devices; Power generation; Power measurement; Quantum computing; Quantum well devices; Radiative recombination; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5501113
Link To Document