Title :
Ultrafast graphene photodetector
Author :
Xia, Fengnian ; Mueller, Thomas ; Lin, Yu-Ming ; Avouris, Phaedon
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate ultrafast transistor-based photodetectors made from single- and few-layer graphene. The photoresponse does not degrade for optical intensity modulations up to 40 GHz, and further analysis suggests that the intrinsic bandwidth may exceed 500 GHz.
Keywords :
Atomic layer deposition; Degradation; Electron optics; Frequency; Intensity modulation; Optical devices; Optical films; Optical modulation; Photodetectors; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
