Study of Optical Emission Spectroscopy in a GaN ECR-PECVD

The paper presents excited gallium (Ga*) emission at 403.2 nm and 417.2 nm by optical emission spectroscopy (OES) during GaN growth in electron-cyclotron-resonance plasma enhance chemical vapor deposition (ECR-PECVD). At the same time, we investigated the spectroscopy of simple nitrogen plasma without TMG source as a function of microwave power. In this paper, we tentatively conclude that N* plays an important role in the GaN deposition by ECR-PECVD. Fourier Transform Infrared Transmission (FTIR) was employed to analyze the composition of GaN layer. The results show that the FTIR reflectivity spectra exhibit the GaN A₁ (LO) and E₁ (TO) phonon modes at 559 cm^-1 and 737 cm^-1, respectively.