Study of Optical Emission Spectroscopy in a GaN ECR-PECVD

Author

Ma, Tao ; Liu, Heng ; Xiong, Yuying

Author_Institution

Henan Normal Univ., Xinxiang, China

fYear

2010

fDate

19-21 June 2010

Firstpage

1

Lastpage

4

Abstract

The paper presents excited gallium (Ga*) emission at 403.2 nm and 417.2 nm by optical emission spectroscopy (OES) during GaN growth in electron-cyclotron-resonance plasma enhance chemical vapor deposition (ECR-PECVD). At the same time, we investigated the spectroscopy of simple nitrogen plasma without TMG source as a function of microwave power. In this paper, we tentatively conclude that N* plays an important role in the GaN deposition by ECR-PECVD. Fourier Transform Infrared Transmission (FTIR) was employed to analyze the composition of GaN layer. The results show that the FTIR reflectivity spectra exhibit the GaN A₁ (LO) and E₁ (TO) phonon modes at 559 cm^-1 and 737 cm^-1, respectively.

Keywords

Fourier transform spectra; III-V semiconductors; cyclotron resonance; gallium arsenide; infrared spectra; phonons; plasma CVD; ECR-PECVD; FTIR reflectivity spectra; Fourier transform infrared transmission; GaN; electron-cyclotron-resonance plasma enhance chemical vapor deposition; excited gallium emission; nitrogen plasma; optical emission spectroscopy; phonon modes; Chemical vapor deposition; Fourier transforms; Gallium nitride; Nitrogen; Phonons; Plasma chemistry; Plasma sources; Reflectivity; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronic (SOPO), 2010 Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4963-7

Electronic_ISBN

978-1-4244-4964-4

Type

conf

DOI

10.1109/SOPO.2010.5504258

Filename

5504258