• DocumentCode
    52165
  • Title

    A 134 GHz {+}4 dBm Frequency Doubler at f_{\\max } in 130 nm CMOS

  • Author

    Sharma, Jaibir ; Dinc, Tolga ; Krishnaswamy, Harish

  • Author_Institution
    Dept. of Electr., Columbia Univ., New York, NY, USA
  • Volume
    24
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    784
  • Lastpage
    786
  • Abstract
    A +4 dBm 134 GHz frequency doubler operating at the maximum oscillation frequency (fmax) of the technology is shown in an IBM 130 nm CMOS process. The doubler is implemented in a balanced topology, driven by a chain of stacked Class-AB amplifiers, and generates the highest reported power in 130 nm CMOS beyond 100 GHz. A theoretical study of frequency doublers is presented including scaling trends across frequency and CMOS technology nodes.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; frequency multipliers; CMOS technology; class-AB amplifiers; frequency 134 GHz; frequency doubler; size 130 nm; CMOS integrated circuits; CMOS technology; Harmonic analysis; Millimeter wave technology; Power generation; Resistance; Semiconductor device modeling; CMOS; frequency doubler; mm-Wave;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2014.2348494
  • Filename
    6889118