DocumentCode :
52165
Title :
A 134 GHz {+}4 dBm Frequency Doubler at f_{\\max } in 130 nm CMOS
Author :
Sharma, Jaibir ; Dinc, Tolga ; Krishnaswamy, Harish
Author_Institution :
Dept. of Electr., Columbia Univ., New York, NY, USA
Volume :
24
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
784
Lastpage :
786
Abstract :
A +4 dBm 134 GHz frequency doubler operating at the maximum oscillation frequency (fmax) of the technology is shown in an IBM 130 nm CMOS process. The doubler is implemented in a balanced topology, driven by a chain of stacked Class-AB amplifiers, and generates the highest reported power in 130 nm CMOS beyond 100 GHz. A theoretical study of frequency doublers is presented including scaling trends across frequency and CMOS technology nodes.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency multipliers; CMOS technology; class-AB amplifiers; frequency 134 GHz; frequency doubler; size 130 nm; CMOS integrated circuits; CMOS technology; Harmonic analysis; Millimeter wave technology; Power generation; Resistance; Semiconductor device modeling; CMOS; frequency doubler; mm-Wave;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2014.2348494
Filename :
6889118
Link To Document :
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