DocumentCode
52165
Title
A 134 GHz
dBm Frequency Doubler at
in 130 nm CMOS
Author
Sharma, Jaibir ; Dinc, Tolga ; Krishnaswamy, Harish
Author_Institution
Dept. of Electr., Columbia Univ., New York, NY, USA
Volume
24
Issue
11
fYear
2014
fDate
Nov. 2014
Firstpage
784
Lastpage
786
Abstract
A +4 dBm 134 GHz frequency doubler operating at the maximum oscillation frequency (fmax) of the technology is shown in an IBM 130 nm CMOS process. The doubler is implemented in a balanced topology, driven by a chain of stacked Class-AB amplifiers, and generates the highest reported power in 130 nm CMOS beyond 100 GHz. A theoretical study of frequency doublers is presented including scaling trends across frequency and CMOS technology nodes.
Keywords
CMOS integrated circuits; field effect MIMIC; frequency multipliers; CMOS technology; class-AB amplifiers; frequency 134 GHz; frequency doubler; size 130 nm; CMOS integrated circuits; CMOS technology; Harmonic analysis; Millimeter wave technology; Power generation; Resistance; Semiconductor device modeling; CMOS; frequency doubler; mm-Wave;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2014.2348494
Filename
6889118
Link To Document