DocumentCode :
521691
Title :
Optical Sensing Characteristics in a Transparent Al-Doped Zinc Oxide-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistor
Author :
Lee, Ching-Sung ; Chou, Bo-Yi ; Hsu, Wei-Chou ; Chu, Sheng-Yuan ; Lin, Der-Yu ; Ho, Chiu-Sheng ; Lai, Yin-Lai ; Yang, Shen-Han ; Chien, Wei-Ting
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
fYear :
2010
fDate :
19-21 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.
Keywords :
III-V semiconductors; aluminium; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; optical sensors; transparency; zinc compounds; Al0.2Ga0.8As-In0.2Ga0.8As; GaAs; ZnO:Al; illumination; optical responses; optical sensing characteristics; three-terminal optical sensor; transparent high electron mobility transistor; Gallium arsenide; Gold; HEMTs; High speed optical techniques; MODFETs; Optical buffering; Optical materials; Optical sensors; Substrates; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
Type :
conf
DOI :
10.1109/SOPO.2010.5504370
Filename :
5504370
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=521691
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