Optical Sensing Characteristics in a Transparent Al-Doped Zinc Oxide-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistor

Author

Lee, Ching-Sung ; Chou, Bo-Yi ; Hsu, Wei-Chou ; Chu, Sheng-Yuan ; Lin, Der-Yu ; Ho, Chiu-Sheng ; Lai, Yin-Lai ; Yang, Shen-Han ; Chien, Wei-Ting

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2010

fDate

19-21 June 2010

Firstpage

1

Lastpage

3

Abstract

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al_0.2Ga_0.8As/In_0.2Ga_0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

Keywords

III-V semiconductors; aluminium; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; optical sensors; transparency; zinc compounds; Al_0.2Ga_0.8As-In_0.2Ga_0.8As; GaAs; ZnO:Al; illumination; optical responses; optical sensing characteristics; three-terminal optical sensor; transparent high electron mobility transistor; Gallium arsenide; Gold; HEMTs; High speed optical techniques; MODFETs; Optical buffering; Optical materials; Optical sensors; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronic (SOPO), 2010 Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4963-7

Electronic_ISBN

978-1-4244-4964-4

Type

conf

DOI

10.1109/SOPO.2010.5504370

Filename

5504370