DocumentCode :
521694
Title :
Size-Independent Growth of GaAs Nanowires
Author :
Ye, Xian ; Huang, Hui ; Guo, Jingwei ; Ren, Xiaomin ; Huang, Yongqing ; Wang, Qi
Author_Institution :
Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear :
2010
fDate :
19-21 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111)B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rode-like shape and the growth rate is independent on its diameters. It can be concluded that the nanowire was grown with main contributions from direct impingement of vapor species onto the Au-Ga droplets and with negligible contributions from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector and size independent growth of nanowires is result from larger diameter and high supersaturation in the droplet.
Keywords :
III-V semiconductors; MOCVD; catalysis; gallium arsenide; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; Au catalyzed vapor-liquid-solid mechanism; GaAs; GaAs (111)B substrate; GaAsB; adatom diffusion; droplets; metal organic chemical vapor deposition; nanowires; rode-like shaped nanowires; size-independent growth; supersatuation; Annealing; Atomic force microscopy; Chemical vapor deposition; Gallium arsenide; Gold; Nanowires; Organic chemicals; Photonics; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
Type :
conf
DOI :
10.1109/SOPO.2010.5504380
Filename :
5504380
Link To Document :
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