• DocumentCode
    521694
  • Title

    Size-Independent Growth of GaAs Nanowires

  • Author

    Ye, Xian ; Huang, Hui ; Guo, Jingwei ; Ren, Xiaomin ; Huang, Yongqing ; Wang, Qi

  • Author_Institution
    Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
  • fYear
    2010
  • fDate
    19-21 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111)B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rode-like shape and the growth rate is independent on its diameters. It can be concluded that the nanowire was grown with main contributions from direct impingement of vapor species onto the Au-Ga droplets and with negligible contributions from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector and size independent growth of nanowires is result from larger diameter and high supersaturation in the droplet.
  • Keywords
    III-V semiconductors; MOCVD; catalysis; gallium arsenide; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; Au catalyzed vapor-liquid-solid mechanism; GaAs; GaAs (111)B substrate; GaAsB; adatom diffusion; droplets; metal organic chemical vapor deposition; nanowires; rode-like shaped nanowires; size-independent growth; supersatuation; Annealing; Atomic force microscopy; Chemical vapor deposition; Gallium arsenide; Gold; Nanowires; Organic chemicals; Photonics; Substrates; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronic (SOPO), 2010 Symposium on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-4963-7
  • Electronic_ISBN
    978-1-4244-4964-4
  • Type

    conf

  • DOI
    10.1109/SOPO.2010.5504380
  • Filename
    5504380