DocumentCode :
521700
Title :
Structural and Magnetic Ordering Behaviour of (Co, Ni, and Al) Doped ZnO Diluted Magnetic Semiconductor
Author :
Jinbiao Fu ; Bo Wu ; Hailong Liu ; Chaohui Zhang ; Maohua Lin ; Lu Chen
Author_Institution :
State Key Lab. Breeding Base of Photocatalysis, Fuzhou Univ., Fuzhou, China
fYear :
2010
fDate :
19-21 June 2010
Firstpage :
1
Lastpage :
4
Abstract :
The stabilities of the doped configurations and the ferromagnetic ordering behaviours in ZnO system are studied systematically by calculating the total energies of the ferromagnetic and antiferromagnetic state based on density function theory. The doping atoms tend to align closely each other to hold the most stable configuration. The weak ferromagnetic properties only exists in the case when the doping Co atoms is a little far from each other. While in the doping system Zn14Ni2O16, the structural ordering behavior is the same as in Zn14Co2O16 system, but the ferromagnetic state is always favorable in all the configurations. When introducing electrons by Al3+ in the (Co, Al) co-doping Zn13Co2Al1O16 materials, the ferromagnetic ordering behavior can be enhanced, and the closer between Al atom and Co-pair, the more significant of ferromagnetic state.
Keywords :
II-VI semiconductors; aluminium; antiferromagnetic materials; cobalt; density functional theory; ferromagnetic materials; magnetic thin films; nickel; semiconductor doping; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds; ZnO:Al; ZnO:Co; ZnO:Ni; antiferromagnetic state; density function theory; doped diluted magnetic semiconductor; ferromagnetic ordering; ferromagnetic state; stable configuration; structural ordering; structural properties; thin films; total energy calculation; Antiferromagnetic materials; Density functional theory; Doping; Laboratories; Magnetic materials; Magnetic semiconductors; Semiconductor materials; Stability; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
Type :
conf
DOI :
10.1109/SOPO.2010.5504395
Filename :
5504395
Link To Document :
بازگشت