Title :
The Overvoltage LSA Relaxation Mode Study in Photoconductive Semiconductor Switch
Author :
Ma, Xiangrong ; Shi, Wei ; Ji, WeiLi ; Xue, Hong
Author_Institution :
Dept. of Appl. Phys., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
The 11mm big gap semi-insulating(SI) GaAs photoconductive semiconductor switch (PCSS) is triggered by pulse laser, steady non-linear output waveforms are shown at 5kV~8kV bias voltage, the linear trend present when the bias voltage is higher than 9kV, the nonlinear Lock-on effect is gradually disappeared with the voltage increasing, eventually the pulse development into a complete linear waveform. Analysis that: the big gap SI-GaAs PCSS operate in higher than many times threshold voltage when switch satisfy 2×104s.cm-3≤n0/f≤2×105s·cm-3 and n0L≥1013cm-2 conditions, switch work in overvoltage LSA(Limit Space charge Accumulate) relaxation mode.
Keywords :
gallium arsenide; limited space charge accumulation; optical pulse generation; optical switches; photoconductivity; semiconductor switches; GaAs; big gap semi-insulating; limit space charge accumulate relaxation mode; nonlinear Lock-on effect; overvoltage LSA relaxation mode; photoconductive semiconductor switch; pulse laser; Optical materials; Optical pulses; Optical switches; Photoconducting devices; Photoconducting materials; Photoconductivity; Power semiconductor switches; Space charge; Threshold voltage; Voltage control;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504407