Title :
Luminescent Properties of Ba3MgSi2-XAlxO8: Eu²+, Mn²+ Phosphor for White LED
Author :
Shen, Changyu ; Li, Ke ; Hou, Qianglong ; Jin, Shangzhong
Author_Institution :
Inst. of Optoelectron. Technol., China Jiliang Univ., Hangzhou, China
Abstract :
Series of Ba3MgSi2-xAlxO8: Eu2+, Mn2+ phosphors were synthesized by solid-state reaction and X-ray powder diffraction analysis confirmed the formation of the samples. These phosphors have a broad excitation band range from near ultraviolet to blue region (340-460nm). The phosphors have three emission bands peaking at 615nm, 480nm and 420 nm respectively under excitation of 380nm irradiation. Two emissions peaking at 420nm and 480nm originated from the 5d to 4f transition of Eu2+ ions that occupy two Ba2+ sites in the crystal of Ba3MgSi2-xAlxO8. The 615nm emission is attributed to the energy transferring from Eu2+ to Mn2+. The intensity ratio between the 420nm and 480nm emissions varied with different concentration of Al ions. When the concentrations of the Eu2+, Mn2+ and Al3+ were 0.1mol, 0.1mol and 0.35mol in the phosphor respectively, the phosphor presented intense white emitting under the excitation of 380nm irradiation. The GaN (380nm)-based Ba2.9Mg0.9Si1.65Al0.35O8:0.1Eu2+ 0.1Mn2+ white LED with the CIE coordinate of (0.3085, 0.3139) and color rendering of over 85 was obtained.
Keywords :
X-ray diffraction; barium compounds; doping profiles; europium; light emitting diodes; magnesium compounds; manganese; phosphors; photoluminescence; ultraviolet spectra; Ba3MgSi2-xAlxO8:Eu2+; Ba3MgSi2-xAlxO8:Mn2+; GaN-Ba3MgSi2-xAlxO8:Eu2+; GaN-Ba3MgSi2-xAlxO8:Mn2+; X-ray powder diffraction; color rendering; emission bands; luminescent properties; phosphor; solid-state reaction; wavelength 420 nm; wavelength 480 nm; wavelength 615 nm; white LED; Doping; Energy exchange; Fluorescent lamps; Gallium nitride; Light emitting diodes; Phosphors; Photoluminescence; Powders; Solid state circuits; X-ray diffraction;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504416