Title :
Luminescence Properties of Oxidized Si-rich Amorphous Silicon Nitride Films
Author :
Huang, R. ; Wang, X. ; Song, J. ; Guo, Y.Q. ; Wang, D.Q. ; Dong, H.P. ; Chen, K.J. ; Xu, J.
Author_Institution :
Dept. of Phys. & Electr. Eng., Hanshan Normal Univ., Chaozhou, China
Abstract :
Luminescence properties of the oxidized Si-rich SiNx films prepared at low temperature were investigated. Strong photoluminescence from the samples can be observed at room temperature. The spectral profile exhibits some obviously modulated features upon the excited wavelength. By employing the oxidized Si-rich SiNx films as the luminescent active layers, the devices with low turn-on voltage have also been demonstrated.
Keywords :
amorphous state; photoluminescence; silicon compounds; thin films; SiN:O; luminescence properties; luminescent active layers; oxidized amorphous silicon nitride films; photoluminescence; spectral profile; temperature 293 K to 298 K; Amorphous silicon; Charge carrier processes; Low voltage; Luminescence; Nanocrystals; Photoluminescence; Physics; Radio frequency; Semiconductor films; Temperature;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504419
