High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory Applications

A high-performance very low-power flexible Ni/Sm₂O₃/indium tin oxide (ITO) resistive device for nonvolatile memories is demonstrated. The device exhibits a good memory margin of >10³ ON/OFF current ratio with very low switching power of <;25 μW. Good memory retention of >10⁵ at 85°C and switching endurance of 10⁴ program-read-erase-read cycles is achieved in the highly flexible Ni/Sm₂O₃/ITO device. The low-power switching operation is believed to be because of the low-energy electron hopping conduction via oxide defects.