• DocumentCode
    523022
  • Title

    Unique Recovery of the Net Recombination-generation Rate in Semiconductor Devices

  • Author

    Wu, Bin

  • Author_Institution
    Coll. of Math. & Phys., Nanjing Univ. of Inf. Sci. & Technol., Nanjing, China
  • Volume
    1
  • fYear
    2010
  • fDate
    4-6 June 2010
  • Firstpage
    47
  • Lastpage
    49
  • Abstract
    In this paper, we consider an inverse problem of determining the net recombination-generation from the induced current on a nonempty set of ohmic contacts. This inverse problem is arising the semiconductor theory. We prove that, under suitable conditions, the determination is unique. A numerical scheme to reconstruct the parameters in net recombination-generation is suggested.
  • Keywords
    inverse problems; semiconductor devices; inverse problem; net recombination-generation rate; numerical scheme; ohmic contacts; semiconductor devices; semiconductor theory; Boundary conditions; Educational institutions; Electrostatic measurements; Image reconstruction; Inverse problems; Nonlinear equations; Ohmic contacts; Physics computing; Radiative recombination; Semiconductor devices; net recomination-generation rate; unique recovery;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information and Computing (ICIC), 2010 Third International Conference on
  • Conference_Location
    Wuxi, Jiang Su
  • Print_ISBN
    978-1-4244-7081-5
  • Electronic_ISBN
    978-1-4244-7082-2
  • Type

    conf

  • DOI
    10.1109/ICIC.2010.18
  • Filename
    5514240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=523022