Title :
Unique Recovery of the Net Recombination-generation Rate in Semiconductor Devices
Author_Institution :
Coll. of Math. & Phys., Nanjing Univ. of Inf. Sci. & Technol., Nanjing, China
Abstract :
In this paper, we consider an inverse problem of determining the net recombination-generation from the induced current on a nonempty set of ohmic contacts. This inverse problem is arising the semiconductor theory. We prove that, under suitable conditions, the determination is unique. A numerical scheme to reconstruct the parameters in net recombination-generation is suggested.
Keywords :
inverse problems; semiconductor devices; inverse problem; net recombination-generation rate; numerical scheme; ohmic contacts; semiconductor devices; semiconductor theory; Boundary conditions; Educational institutions; Electrostatic measurements; Image reconstruction; Inverse problems; Nonlinear equations; Ohmic contacts; Physics computing; Radiative recombination; Semiconductor devices; net recomination-generation rate; unique recovery;
Conference_Titel :
Information and Computing (ICIC), 2010 Third International Conference on
Conference_Location :
Wuxi, Jiang Su
Print_ISBN :
978-1-4244-7081-5
Electronic_ISBN :
978-1-4244-7082-2
DOI :
10.1109/ICIC.2010.18
