Title :
Correction to “Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory” [Sep 13 1139-1141]
Author :
Kang, Dong-Hyung ; Lee, Kahyun ; Seo, S. ; Kim, Sungho ; Lee, Jhih-Shian ; Bae, Dong-Seok ; Li, Dong Hua ; Hwang, Yuh-Shyan ; Shin, Hae-Young
Author_Institution :
Interuniversity Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea
Abstract :
In the above paper (ibid., vol. 34, no. 9, pp. 1139-1141, Sep. 2013), the corresponding authors are not correctly indicated. Hyungcheol Shin is also an author to whom correspondence for the published letter should be directed toward.
Keywords :
Electron traps; Flash memories; Integrated circuits; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2280059
