DocumentCode
5233
Title
Correction to “Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory” [Sep 13 1139-1141]
Author
Kang, Dong-Hyung ; Lee, Kahyun ; Seo, S. ; Kim, Sungho ; Lee, Jhih-Shian ; Bae, Dong-Seok ; Li, Dong Hua ; Hwang, Yuh-Shyan ; Shin, Hae-Young
Author_Institution
Interuniversity Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea
Volume
34
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
1345
Lastpage
1345
Abstract
In the above paper (ibid., vol. 34, no. 9, pp. 1139-1141, Sep. 2013), the corresponding authors are not correctly indicated. Hyungcheol Shin is also an author to whom correspondence for the published letter should be directed toward.
Keywords
Electron traps; Flash memories; Integrated circuits; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2280059
Filename
6595568
Link To Document